A comprehensive model of PMOS NBTI degradation
نویسندگان
چکیده
منابع مشابه
A comprehensive model of PMOS NBTI degradation
Negative bias temperature instability has become an important reliability concern for ultra-scaled Silicon IC technology with significant implications for both analog and digital circuit design. In this paper, we construct a comprehensive model for NBTI phenomena within the framework of the standard reaction–diffusion model. We demonstrate how to solve the reaction–diffusion equations in a way ...
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ژورنال
عنوان ژورنال: Microelectronics Reliability
سال: 2005
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2004.03.019